USPatents
1.Robert Tsu, J. McPherson, W.R. McKee, and T. Bonifield, “Line-to-Line Reliability Enhancement Using a Dielectric Liner for a Low Dielectric Constant Interlevel and Intralevel Dielectric Layer”, US Patent#7,402,514 (2008).
2.Jiang; Qing-Tang, Tsu; Robert, Brennan; Kenneth D., “Copper Transition Layer for Improving Copper Interconnection Reliability”, US Patent#6,951,812 (2005).
3.Asano; Isamu, Tsu; Robert, “Method of Manufacturing a Semiconductor Integrated Circuit Device Having a Memory Cell Array and a Peripheral Circuit Region”, US Patent#6,696,337 (2004).
4.Jiang; Qing-Tang, Tsu; Robert, Brennan; Kenneth D., “Copper Transition Layer for Improving Copper Interconnection Reliability”, US Patent#6,693,356 (2004).
5.Tsu; Robert, Asano; Isamu, Iijima; Shinpei, McKee; William R., “Integrated Circuit Capacitor”, US Patent#6,653,676 (2003).
6.Cho; Chih-Chen, McKee; Jeffrey A., William R., Asano; Isamu, Tsu; Robert Y., “Integrated Circuit and Method”, US Patent#6,528,888 (2003).
7.Robert Tsu, Q.Z. Hong, and W.R. McKee, “Yield Improvement of Dual Damascene Through Oxide Filling”, US Patent#6,461,955 (2002).
8.Asano; Isamu, Tsu; Robert, “Method of Manufacturing a Semiconductor Integrated Circuit Device Including a DRAM Having Reduced Parasitic Bit Line Capacity”, US Patent#6,417,045 (2002).
9.Kulwicki; Bernard M., Tsu; Robert, “Barium Strontium Titanate (BST) Thin Films Using Boron”, US Patent#6,331,325 (2001).
10.Tsu; Robert, Asano; Isamu, Iijima; Shinpei, MaKee; William R., “Integrated Circuit Capacitor”, US Patent#6,294,420 (2001).
11.Hwang; Ming, Tsu; Robert, Hsu; Wei-Yung, “Selective Oxidation Methods for Metal Oxide Deposition on Metals in Capacitor Fabrication”, US Patent#6,207,561 (2001).
12.Robert Tsu, S. Aoyama, and S. Ando, “Method of Fabricating In-Situ Doped Rough Polycrystalline Silicon Using A Single Wafer Reactor”, US Patent#6,194,292 (2001).
12.Asano; Isamu, Tsu; Robert, “Semiconductor Integrated Circuit Device Including a DRAM Having Reduced Parasitic Bit Line Capacitance and Method of Manufacturing Same”, US Patent#6,168,985 (2001).
14.Tsu; Robert, McKee; William R., Iijima; Shimpei, Asano; Isamu, Kunitomo; Masato, “Method for Fabricating an Integrated Circuit Structure”, US Patent#6,096,597 (2000).
15.Robert Tsu, William R. McKee, and Ming Hwang, “In-Situ Doped Rough Polysilicon Storage Cell Structure Formed Using Gas Phase Nucleation”, US Patent# 6,060,354 (2000).
16. Including a DRAM Having Reduced Parasitic Bit Line Capacitance”, US Patent#6,037,207, (2000).
17.Robert Tsu, Jing Shu, Isamu Asano, and Jeff McKee, “Self-Aligned Multiple Crown Storage Capacitor and Method of Formation”, US patent #5,972,769 (1999).
18.Robert Tsu and Bernard M. Kulwicki, “Method of Making Barium Strontium Titantate (BST) Thin Films by Erbium Donor”, US patent # 5,731,220 (1998).
19.Robert Tsu and Bernard M. Kulwicki, “Barium Strontium Titantate (BST) Thin Films by Erbium Donor Doping”, US patent # 5,635,741 (1997).
20.Bernard M. Kulwicki, “Barium Strontium Titanate (BST) Think Films Using Boron”, US patent # 5,617,290 (1997).
21.Scott Summerfelt, Howard Beratan, and Robert Tsu, “ Processing Methods for High K-Dielectric Constant Materials”, US patent # 5,609,927 (1997).
22.Robert Tsu and Wei-Yung Hsu, “Sloped Storage Node for A 3-D DRAM Cell Structure”, US patent # 5,573,979 (1996).
23.Robert Tsu, Bernard Kulwicki, “Barium Strontium Titanate (BST) Thin Film by Holmium Donor”, US patent # 5,453,908 (1995).
24.Robert Tsu, “Reliability Enhancement of Aluminum Interconnects by Reacting Aluminum Leads with a Strengthening Gas”, US patent # 5,432,128 (1995).
中文专利
1.林明为,俎永熙,林庆龙,陈科宏,李辉,王士伟,吴纬权,黄炳境,“电流模式直流转换器”,中国,专利授权公告号: CN102761249B (2015).
2.林明为,俎永熙,林庆龙,陈科宏,李昱辉,王士伟,吴纬权,黄炳境,“电流模式直流转换器及其直流转换方法”,台湾,专利证书号: I463778 (2014).
3.俎永熙,林庆龙,“电池管理电路、电池模块与电池管理方法”,台湾,专利证书号: I415363 (2013).
4.俎永熙,林庆龙,“电池管理电路、电池模块与电池管理方法”,中国,专利授权公告号: CN102377214A (2012).
5.张海洋,俎永熙,黄怡,李国锋,“MOS器件的检测方法及制造方法”,中国,专利授权公告号: CN102024726B (2012).
6.俎永熙,洪其中,麦威廉,“利用氧化物填充之双金属镶嵌制造方法”,台湾,专利证书号: 473837 (2002).
7.浅野勇,俎永熙,“半导体集成电路制置及其制造方法”,台湾,专利证书号: 406398 (2000).
8.俎永熙,浅野勇,饭岛晋平,麦威廉,“形成集成电路电容器、半导体结构、记忆装置之方法及集成电路电容器与制造积体半导体记忆装置之电容器结构之方法”,台湾,专利证书号: 400601 (2000).
9.俎永熙,麦威廉,黄明彰,“粗糙多晶硅单元格及其形成方法”,台湾,专利证书号: 396500 (2000).
10.俎永熙,浅野勇,麦杰夫,苏珍,“半导体单元格结构及其形成法与多冠储存电容器及记忆装置”,台湾,专利证书号: 391064 (2000).
11.俎永熙,库伯纳,“藉铒施体掺杂之钛酸钡锶薄膜之改良”,台湾,专利证书号: 376562 (1999).
12.俎永熙,库伯纳,“使用硼之钛酸钡锶薄膜之改良”,台湾,专利证书号: 301767 (1997).
13.俎永熙,库伯纳,“藉钬施体掺杂之钛酸钡锶薄膜之改良”,台湾,专利证书号: 297148 (1997).