男，1951年生，1982年毕业于美国加州大学伯克莱分校学校电机工程专业，获得工学博士学位。
主要经历
2006.3-2010.10中芯国际资深副总裁
2010.10-2015.11美国格芯（Globalfoundries)院士/技术总监
2015.11-2018.6中芯国际资深副总裁
2018.6-至今 芯恩（青岛）集成电路公司资深副总裁
2019年被聘为青岛大学电子信息（微纳技术）学院教授。
一、主要研究方向：集成电路制造
二、代表性科研成果
1）学术论文
Some recent 3 yrs (2016-)
M.Chi, D.Xiao, and R.Chang,“Fast Development of IC technology in AI and IoT era”, paper #S37-2, ICSICT, 2018; and Symp-1, #5, CSTIC, 2019.
M.Chi and H.Wu,“Advanced logic and specialty technologies for VLSI manufacturing in fast expansion at China”, paper #I-4, CSTIC, March 2017.
“W.Peng, M.Chi, et.al.,“Reduction of“dark-gate”defects in replacement-metal-gate process and middle-of-line contacts for advanced planar CMOS and FinFET technology”, ASMC, paper#8.1, May. 2016.
W.Peng, M.Chi, et.al.,“Elimination of Tungsten-voids in middle-of-line contacts for advanced planar CMOS and FinFET technology”, ASMC, session#5: poster, May. 2016.
2）专著
1.Y. Wang, Y. Cheng, and M. Chi;“Green Micro/Nano Electronics”, Science Press, Beijing, 2013.
2. R.Chang, et. al.,“Nano-IC Manufacturing Technology“,Chap 3（CMOS logic and Memory process flow）,清华大学出版社,1st Ed, (2014); 2nd Ed (2017).
3. Y. Wang, et.al.”集成电路工业全书”，Chap-6, 2nd Ed. Sept, 2018.
4. Y.Wang, et.al.“Handbook of Integrated Circuit Industry”, Chapter 6, to be published, April, 2020.
3）专利
Some recent US patents (2019)：
US# 10,290,654:“Circuit structures with vertically spaced transistors and fabrication methods”, by H.Zang, M.Eller, and M.Chi, May 14, 2019.
US# 10,290,634:“Multiple threshold voltages using fin pitch and profile”, by W.Peng, and M.Chi, May 14, 2019.
US#10,276,390:“Method and apparatus for reducing threshold voltage mismatch in an integrated circuit”, by M.Chi, M.Zhao, and K.Kikuta, April 30, 2019.
US#10,269,811:“Selective SAC capping on fin field effect transistor structures and related methods”, by M.Chi and H.Zang, April 23, 2019.
US#10,243,059:“Source/Drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins”, by S.Samavedan, M.Eller, M.Chi, H.Zang; March 26, 2019.
US#10,204,991:“Transistor structures and fabrication methods thereof”, by X.Wu, J.Liu, M.Chi, Feb 12, 2019.
US#10,177,157:“Transistor structure having multiple n-type and/or p-type elongated regions intersecting under common gate”, by H.Zabg, M.Chi, Jan 8, 2019.
US#10,170,377:“Memory cell with recessed source/drain contacts to reduce capacitance”, bu H.Zang and M.Chi, Jan. 1, 2019.
US#10,170,353:“Devices and methods for dynamically tunable biasing to backplates and wells”, by H.Zang, and M.Chi, Jan.1, 2019.
US#10,170,315:“Semiconductor device having local buried oxide”, by Y.Liu and M.Chi, Jan. 1, 2019.
