
温峥,教授,硕士/博士生导师。长期从事电介质物理学、铁电材料、微电子学的科研、教学工作,致力于新一代电子材料与信息存储器件的设计、制备与集成研究。中国仪表功能材料学会电子元器件关键材料与技术专业委员会常务委员,Journal of Advanced Dielectrics期刊青年编委。主持国家自然科学基金项目四项(面上三项、青基一项),先后入选山东省泰山学者工程-青年专家、特聘专家计划,获山东省自然科学基金省优青、省杰青等项目资助。以通讯/第一作者在Nature Materials(两篇)、Nature Communications(两篇)、Science Advances等学术期刊发表论文30余篇,引用超过1500次。荣获2024年度山东省自然科学奖二等奖(第一完成人)。
1.实验室简介:
本实验室致力于探索薄膜异质结构微结构参数与多种物性之间的作用关系,借助于脉冲激光沉积、扫描探针显微镜等先进薄膜制备技术,基于晶格自由度与电有序,磁有序的耦合,发展在信息存储,存算融合,电介质储能等领域具有应用前景的新结构,新材料,以及基于此的原型器件。实验室现有脉冲激光沉积系统2套(准分子激光器,TSST腔体),原子力显微镜(牛津AR,含PFM,EFM,SKPM,MFM等模块)1套,5K低温探针台,Radient铁电测试仪,4294A阻抗分析仪,各种数字源表、电学测试设备等。
2.代表作(更新时间2025年4月):
(1) Weijie Zheng#, Xingyue Ma#, Zhentao Pang#, Yifeng Ren, Hongying Chen, Jibo Xu, Chunyan Zheng, Jianyi Liu, Xiaohui Liu, Yu Deng*, Yuefeng Nie, Di Wu, Laurent Bellaiche, Yurong Yang*, and Zheng Wen*, Skyrmion nanodomains in ferroelectric-antiferroelectric solid solutions, Nature Materials, DOI: 10.1038/s41563-025-02216-8 (2025)
(2) Yahui Yu#, Qing Zhang#, Zhiyu Xu#, Weijie Zheng, Jibo Xu, Zhongnan Xi, Lin Zhu, Chunyan Ding, Yanqiang Cao, Chunyan Zheng, Yalin Qin, Shandong Li, Aidong Li, Di Wu, Karin M. Rabe, Xiaohui Liu*, and Zheng Wen*, Structure-evolution-designed amorphous oxides for dielectric energy storage, Nature Communications, 14: 3031 (2023)
(3) Yihao Yang#, Ming Wu#, Xingwen Zheng#, Chunyan Zheng, Jibo Xu, Zhiyu Xu, Xiaofei Li, Xiaojie Lou, Di Wu, Xiaohui Liu*, Stephen J. Pennycook*, and Zheng Wen*, Atomic-scale fatigue mechanism of ferroelectric tunnel junctions, Science Advances 7: eabh2716 (2021)
(4) Jibo Xu#, Xiaoyan Zhang#, Xia Liu#, Ming Wu, Junzhe Liu, Zhiyu Liu, Meiyue Li, Yuhao Yue, Yawen Xu, Chenyu Dong, Weijie Zheng, Lin Zhu, Yanqiang Cao, Chunyan Zheng, Jianyi Liu, Aidong Li, Di Wu, Lixue Zhang*, and Zheng Wen*, Enhanced oxygen evolution reaction in flexoelectric thin-film heterostructures, Applied Physics Reviews, 11: 041419 (2024)
(5) Zhongnan Xi, Jieji Ruan, Chen Li, Chunyan Zheng, Zheng Wen*, Jiyan Dai, Aidong Li, and Di Wu*, Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier, Nature Communications, 8: 15217 (2017)
(6) Ming Wu#, Zhizheng Jiang#, Xiaojie Lou*, Fan Zhang, Dongsheng Song, Shoucong Ning, Mengyao Guo, Stephen J. Pennycook*, Ji-yan Dai, and Zheng Wen*, Flexoelectric Thin-Film Photodetectors, Nano Letters, 21: 2946-2952 (2021)
(7) Zheng Wen* and Di Wu*, Ferroelectric tunnel junctions: modulations on the potential barrier, Advanced Materials, 32: 1904123 (2020)
(8) Jibo Xu, Weijie Zheng, Yahui Yu, Chunyan Ding, Ming Wu*, and Zheng Wen*, Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: a comparative study, Applied Physics Letters, 121: 203502 (2022)
(9) Yuke Li, Jibo Xu, Zhiyu Xu, Yahui Yu, Yuanhao Zhang, Lingzhi Lu, Weijie Zheng, Chunyan Ding, Zonghan Wen, Hongyan Shi, Chaojing Lu, and Zheng Wen*, Enhanced energy storage properties in relaxor Pb(Mg1/3Nb2/3)O3-PbTiO3thin-film capacitors by incorporating buffer layers, Applied Physics Letters, 120: 252901 (2022)
(10) Zheng Wen, Chen Li, Di Wu, Aidong Li, and Naiben Ming, Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions, Nature Materials, 12: 617-621 (2013)
3.联系方式:
QQ:2284204213;Email:zwen@qdu.edu.cn;办公室:诚思楼405
欢迎微电子专业、物理学专业、材料科学专业背景,对新一代信息技术、半导体材料与器件、集成电路与人工智能感兴趣的同学加入我们科研团队。