温峥，教授，硕士/博士生导师。长期从事电介质材料及相关功能薄膜与器件的科研、教学工作。中国仪表功能材料学会电子元器件关键材料与技术专业委员会常务委员，Journal of Advanced Dielectrics期刊青年编委。主持国家自然科学基金项目三项，入选山东省泰山学者工程-青年专家人才计划，获山东省自然科学基金省杰青、省优青项目资助，带领团队获批了山东省高等学校青创科技支持计划，电子信息学院功能薄膜与电子学器件实验室负责人。以通讯/第一作者在Nature Materials、Nature Communications、Science Advances、Advanced Materials、Nano Letters等顶级和高水平学术期刊发表论文30余篇，引用超过1000次，单篇最高他引442次，三篇入选了ESI高被引用论文。
1.实验室研究内容：
功能薄膜与电子学器件实验室致力于探索薄膜异质结构微结构参数与多种物性之间的作用关系，借助于脉冲激光沉积、原子力显微镜等先进薄膜制备技术，基于晶格自由度与电有序，磁有序的耦合，发展在信息存储，光电功能转化，电介质储能等领域具有应用前景的新结构，新材料，以及基于此的原型器件。实验室现有脉冲激光沉积系统2套（准分子激光器，TSST腔体），原子力显微镜（牛津AR，含PFM，EFM，SKPM，MFM等模块）1套，5K低温探针台，Radient铁电测试仪，4294A阻抗分析仪，各种数字源表、电学测试设备等共计600万规模。实验室研究方向如下：
（1）忆阻行为与人工神经网络
（2）新一代CMOS集成铁电信息存储器
（3）超级电容器与能量存储相关应用
2.实验室发表论文（更新时间2022年10月）：
(1) Yihao Yang#, Ming Wu#, Xingwen Zheng#, Chunyan Zheng, Jibo Xu, Zhiyu Xu, Xiaofei Li, Xiaojie Lou, Di Wu, Xiaohui Liu*, Stephen J. Pennycook*, and Zheng Wen*, Atomic-scale fatigue mechanism of ferroelectric tunnel junctions, SCIENCE ADVANCES, 7: eabh2716 (2021)
(2) Zhongnan Xi, Jieji Ruan, Chen Li, Chunyan Zheng, Zheng Wen*, Jiyan Dai, Aidong Li, and Di Wu*, Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier, NATURE COMMUNICATIONS, 8: 15217 (2017)
(3) Ming Wu#, Zhizheng Jiang#, Xiaojie Lou*, Fan Zhang, Dongsheng Song, Shoucong Ning, Mengyao Guo, Stephen J. Pennycook*, Ji-yan Dai, and Zheng Wen*, Flexoelectric Thin-Film Photodetectors, NANO LETTERS, 21: 2946-2952 (2021)
(4) Zheng Wen* and Di Wu*, Ferroelectric tunnel junctions: modulations on the potential barrier, ADVANCED MATERIALS, 32: 1904123 (2020)
(5) Yihao Yang#, Zhongnan Xi#, Yuehang Dong#, Chunyan Zheng, Haihua Hu, Xiaofei Li, Zhizheng Jiang, Wen-Cai Lu, Di Wu*, and Zheng Wen*, Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing, ACS APPLIED MATERIALS & INTERFACES, 12: 56300-56309 (2020)
(6) Yihao Yang, Ming Wu, Xiaofei Li, Haihua Hu, Zhizheng Jiang, Zhen Li, Xintai Hao, Chunyan Zheng, Xiaojie Lou, Stephen J. Pennycook, and Zheng Wen*, The Role of Ferroelectric Polarization in Resistive Memory Properties of Metal/Insulator/Semiconductor Tunnel Junctions: A Comparative Study, ACS APPLIED MATERIALS & INTERFACES, 12: 32935-32942 (2020)
(7) Yiteng Zhang, Yanqiang Cao, Haihua Hu, Xi Wang, Pengzheng Li, Yu Yang, Jie Zheng, Chi Zhang, Zhiqing Song, Aidong Li, and Zheng Wen*, Flexible Metal−Insulator Transitions Based on van der Waals Oxide Heterostructures, ACS APPLIED MATERIALS & INTERFACES, 11: 8284-8290 (2019)
(8) Zhongnan Xi, Chunyan Zheng, and Zheng Wen*, Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions, ACS APPLIED MATERIALS & INTERFACES, 10: 6024-6030 (2018)
(9) Haihua Hu, Yuke Li, Yihao Yang, Wenxin Lv, Han Yu, Wencai Lu, Yuehang Dong*, and Zheng Wen*, Enhanced resistance switching in ultrathin Ag/SrTiO3/(La,Sr)MnO3 memristors and their long-term plasticity for neuromorphic computing, APPLIED PHYSICS LETTERS, 119: 023502 (2021)
(10) Yuanhao Zhang, Jibo Xu, Yahui Yu, Weijie Zheng, Zhiyu Xu, Lingzhi Lu, Ziyu Wang, Chaojing Lu, and Zheng Wen*, Changeable electroresistance in Pt/Pb(Zr,Ti)O-3/(La,Sr)MnO3 tunnel junctions and memristive properties for synaptic plasticity emulation, APPLIED PHYSICS LETTERS, 120: 203501 (2022)
(11) Zhiyu Xu, Lingzhi Lu, Jibo Xu, Weijie Zheng, Yahui Yu, Chunyan Ding, Shirui Wang, Feng Chen, Mingyang Tang, Chaojing Lu*, and Zheng Wen*, Conduction mechanisms of ferroelectric La:HfO2 ultrathin films, APPLIED PHYSICS LETTERS, 120: 133504 (2022)
(12) Yuke Li, Jibo Xu, Zhiyu Xu, Yahui Yu, Yuanhao Zhang, Lingzhi Lu, Weijie Zheng, Chunyan Ding, Zonghan Wen, Hongyan Shi, Chaojing Lu, and Zheng Wen*, Enhanced energy storage properties in relaxor Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-film capacitors by incorporating buffer layers, APPLIED PHYSICS LETTERS, 120: 252901 (2022)
(13) Zhongnan Xi, Qiao Jin, Chunyan Zheng, Yongcheng Zhang, Chaojing Lu, Qiang Li, Shandong Li, Jiyan Dai, and Zheng Wen*, High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions, APPLIED PHYSICS LETTERS, 111: 132905 (2017)
(14) Qiao Jin, Chunyan Zheng, Yongcheng Zhang, Chaojing Lu, Jiyan Dai, and Zheng Wen*, Enhanced resistive memory in Nb-doped BaTiO3 ferroelectric diodes, APPLIED PHYSICS LETTERS, 111: 032902 (2017)
(15) Zhizheng Jiang , Zhiyu Xu, Zhongnan Xi, Yihao Yang, Ming Wu, Yuke Li, Xiang Li, Qianying Wang, Chen Li , Di Wu, Zheng Wen*, Flexoelectric-induced photovoltaic effects and tunable photocurrents in flexible LaFeO3 epitaxial heterostructures, JOURNAL OF MATERIOMICS, 8: 281-287 (2022)
(16) Xiaofei Li, Chen Li, Zhiyu Xu, Yongsheng Li, Yihao Yang, Haihua Hu, Zhizheng Jiang, Jiayi Wang, Jiaxin Ren, Chunyan Zheng, Chaojing Lu, and Zheng Wen*, Ferroelectric Properties and Polarization Fatigue of La: HfO2 Thin-Film Capacitors, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 15: 2000481(2021)
(17) Xi Wang, MingWu, Fansen Wei, Yiteng Zhang, Chunyan Zheng, Xiaojie Lou,Stephen J Pennycook and Zheng Wen*, Electroresistance of Pt/BaTiO3/LaNiO3 ferroelectric tunnel junctions and its dependence on BaTiO3 thickness, MATERIALS RESEARCH EXPRESS, 6: 046307 (2019)
3.毕业学生去向：
我实验室研究生获国家奖学金、山东省优秀硕士毕业论文、山东省研究生优秀创新成果奖等荣誉多项；以第一作者在Nature子刊、Science子刊、中科院JCR一区等高水平学术期刊发表论文；毕业被985、双一流、中科院所等录取或公派出国攻读博士学位，或入职国企等信息技术高新产业。
毕业研究生去向：
2018届：席中男（博士研究生，南京大学现代工程与应用科学学院）；金桥（博士研究生，中科院物理所）。
2019届：张艺腾（博士研究生，德国莱布尼兹汉诺威大学）；王玺（测试工程师，西安紫光国芯）。
2021届：杨以浩（博士研究生，南方科技大学）；李晓飞（工程师，山东春光磁电）；姜植峥（研发工程师，正海磁性材料股份有限公司）；胡海华（教师，东明县第二初级中学）。
2022届：许志宇（产品工程师，芯恩集成电路有限公司）；张元昊（设备工程师，台积电中国有限公司）；李雨珂（评测工程师，舜宇光电信息有限公司）
4.联系方式：
QQ：2284204213；Email：zwen@qdu.edu.cn；办公室：诚思楼405
欢迎微电子专业、物理学专业、材料科学专业背景，对新一代信息技术、半导体材料与器件、集成电路与人工智能感兴趣的同学加入我们科研团队。
