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  微电子学系    
单福凯 副院长
2016-06-24 19:37   审核人:

单福凯,男,1971年2月生,山东临沂人,教授,博士生导师,青岛大学学术委员会委员,青岛大学电子信息学院副院长,青岛大学电子信息学术委员会主任,青岛大学印刷平板显示技术研究所所长,国际显示学会(SID,Society for Information Display)技术委员会委员。于2000年获复旦大学理学博士学位;2000-2014年先后在韩国釜山大学和东义大学从事半导体器件研究,现已发表SCI文章100余篇,其中署名为第一作者和通信作者的有80余篇,被他人引用超过2000次,单篇最高他引200多次;以第一发明人申报国家发明专利12项,已授权9项。《Advanced Functional Materials》、《Applied Physics Letters》、《NPG Asia Materials》等国际著名SCI期刊的审稿人。目前主持国家自然科学基金面上项目2项(2015-2018, 2017-2020),山东省自然基金2项。主要研究方向:宽禁带半导体薄膜材料;高k值介电材料;锂离子电池材料及半导体器件的集成,其中包括薄膜晶体管、光电探测器、锂离子电池等。(简介截止到2017年3月1日)。

目前本课题组的研究方向为固体电子学与微电子学方向。研究重点是超高性能平板显示器件中的柔性透明薄膜晶体管的研究。本课题组主要实验设备包括:磁控溅射系统、离子束溅射系统、熔胶凝胶系统、等离子体清洗系统、热蒸发系统、静电纺丝系统,光刻机、蔡司光学显微镜,真空管式炉、马弗炉、超高精度半导体参数测试系统(测量精度达到10 fA)、超高精度阻抗参数测量系统等。

欢迎有志于在微电子器件领域进一步深造的研究生和本科生加入我们课题组。联系email:fkshan@qdu.edu.cn

近年发表学术论文如下:

2017

1. You Meng, Guoxia Liu*, Ao Liu, Zidong Guo, Wenjia Sun and Fukai Shan* (Correspondence), Photochemical activation of electrospun In2O3 nanofibers for high-performance electronic devices, ACS Applied Mateials & Interfaces, Accepted. 2017.03.01.

2. Ao Liu, Zidong Guo, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Redox chloride elimination reaction: facile solution route for indium-freee, low-voltage, and high-performance transistors, Advanced Electronic Materials, http://dx.doi.org/10.1002/aelm.201600513/

3. Huihui Zhu, Ao Liu, Fukai Shan* (Correspondence), Wenrong Yang, Colin Barrow and Jingquan Liu*, Direct transfer of grapheme and application in low-voltage hybrid transistors, RSC Advances, 7 (2017) 2172-2179.

4. Ao Liu, Shengbin Nie, Guoxia Liu, Huihui Zhu, Chundan Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo martins and Fukai Shan* (Correspondence), In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors, Journal of Materials Chemistry C, http://dx.doi.org/10.1039/c7tc00574a 

2016

5. Chundan Zhu, Ao Liu, Guoxia Liu*, Guixia Jiang, You Meng, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-perfromance oxide thin-film transistors, Journal of Materials Chemistry C, 4 (2016) 10715-10721.

6. Guixia Jiang, Ao Liu, Guoxia Liu*, Chundan Zhu, You Meng, Byoungchul Shin, Elvira fortunate, Rodrigo Martins, and Fukai Shan* (Correspondence),Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors. Applied Physics Letters, 109 (2016) 183508.

7. Fukai Shan#* (Correspondence), Ao Liu#, Huihui Zhu, Weijin Kong, Jingquan Liu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, and Guoxia Liu*,  High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric, Journal of Materials Chemistry C, 4 (2016) 9438-9444.

8. Yuanyue Li, Guoxia Liu, Xiaoying Qin*, and Fukai Shan*(Correspondence), Inhibition of minority transport for elevating the thermoelectric figure of merit of CuO/BiSbTe nanocomposites at high temperatures, RSC Advances, 6 (2016) 112050-112056.

9. M Lorenz1, M S Ramachandra Rao2, T Venkatesan3, E Fortunato4,P Barquinha4, R Branquinho4, D Salgueiro4, R Martins4, E Carlos4, A Liu5, Fukai Shan5, M Grundmann1, H Boschker6, J Mukherjee2, M Priyadarshini2,7, N DasGupta7, D J Rogers8, F H Teherani8, E V Sandana8, P Bove8,K Rietwyk9, A Zaban9, A Veziridis10, A Weidenkaff10, M Muralidhar11, M Murakami11, S Abel12, J Fompeyrine12, J Zuniga-Perez13, R Ramesh14,N A Spaldin15, S Ostanin16, V Borisov16, I Mertig16, V Lazenka17,G Srinivasan18, W Prellier19, M Uchida20, M Kawasaki20, R Pentcheva21,P Gegenwart22, F Miletto Granozio23, J Fontcuberta24 and N Pryds25, The 2016 oxide electronic materials and oxide interfaces roadmap. Journal of Physics D: Applied Physics, 49 (2016) 433001 (1-43).

10. Ao Liu, Guoxia Liu*, Chundan Zhu, Huihui Zhu, Elvira fortunate, Rodrigo Martins, and Fukai Shan*(Correspondence), Solution-processed alkaline lithium oxide dielectrics for applications in n- and p-type thin-film transistors, Advanced Electronic Materials, 2 (2016) 1600140.

11. Ao Liu, G. X. Liu*, H. H. Zhu, B. C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric, Applied Physics Letters, 108 (2016)233506

12. Ao Liu, Guoxia Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors, Journal of Materials Chemistry C, 4 (2016) 4478-4484.

13. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan* Correspondence), AgV7O18: a new silver vanadate semiconductor with photodegradation ability on dyes under visible-light irradiation, Materials Letters, 169 (2016) 82-85.

14. Fengyun Wang*, Hongchao Zhang, Lei Liu, Byoungchul Shin, and Fukai Shan Correspondence), Synthesis, surface properties and optical characteristics of CuV2O6 nanofibers, Journal of Alloys and Compounds, 672 (2016) 229-237.

15. Huihui Zhu, Ao Liu, Fukai. Shan* (Correspondence), Wenrong Yang, Wenling Zhang, Da Li, Jingquan Liu*, One-step synthesis of graphene quantum dots from defective CVD graphene and their application in IGZO UV thin film phototransistor, Carbon,100 (2016) 201-207.

2015

16. Ao Liu, G.X.Liu, H.H. Zhu, B.C. Shin, E. Fortunato, R. Martins, Fukai Shan* (Correspondence), Eco-friendly water-induced aluminum oxide dielectrics and their applications in hybrid metal oxide/polymer TFT, RSC Advances, 5 (2015) 86606-86613.

17. Ao Liu, Guoxia Liu, Huihui Zhu, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Water-induced scandium oxide dielectric for low-operating voltage n- and p-type metal-oxide thin-film transistors, Advanced Functional Materials,25 (2015) 7180-7188.

18. Jianmin Yu, Guoxia Liu, Ao Liu, You Meng, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique, Journal of Materials Chemistry C, 3 (2015) 9509-9513.

19. Ao Liu, Guoxia Liu, Huihui Zhu, You Meng, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors, Current Applied Physics, 15 (2015) S75-S81.

20. Guoxia Liu, Ao Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Yiqian Wang, Fukai Shan* (Correspondence), Low-temperature, nontoxic water-induced metal-oxide thin films and their application in thin-film transistors, Advanced Functional Materials, 25 (2015) 2564-2572.

21. You Meng, Guoxia Liu, Ao Liu, Huijun Song, Yang Hou, Byoungchul, Fukai Shan* (Correspondence), Low-temperature fabrication of high performance indium oxide thin film transistors, RSC Advances, 5 (2015) 37807-37813.

22. Feng Zhang, Guoxia Liu, Ao Liu, Byoungchul Shin, Fukai Shan* (Correspondence), Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications, Ceramics International, 41 (2015) 13218-13223.

23. Fukai Shan* (Correspondence), Ao Liu, Guo Xia Liu, You Meng, Elvira Fortunato, Rodrigo Martins, Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrOx dielectric, Journal of Display Technology, 11 (2015) 541-546.

24. Huiyue Tan, Guoxia Liu, Ao Liu, Byoungchul, Fukai Shan* (Correspondence), The annealing effects on the properties of solution-processed alumina thin film and its application in TFTs, Ceramics International, 6 (2015) S349-S355.

25. Feng Xu, Ao Liu, Guo Xia Liu, Byoungchul Shin, and Fukai Shan* (Correspondence), Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors, Ceramics International, 41 (2015) S337-S343.

26. G.X. Liu*, A. Liu, Y. Meng, Fukai Shan* (Correspondence), B.C. Shin, W.J. Lee, C.R. Cho, Annealing dependence of solution-processed ultra-thin ZrOx films for gate dielectric applications, Journal of Nanoscience & Nanotechnology, 15 (2015) 2185-2191.

2014

27. Ao Liu, Guoxia Liu, Huihui Zhu, Feng Xu, Elvira Fortunato, Rodrigo Martins, Fukai Shan* (Correspondence), Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrOx dielectric, ACS Applied Materials & Interfaces, 6 (2014) 17364-17369.

28. G.X. Liu*, A. Liu, Fukai Shan* (Correspondence), Y. Meng, B.C. Shin, E. Fortunato, R. Martins, High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric, Applied Physics Letters, 105 (2014) 113509-113514.

29. G.Z. Geng, G.X. Liu, Fukai Shan* (Correspondence), A. Liu, Q. Zhang, W.J. Lee, B.C. Shin, H.Z. Wu, Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited by using pulsed laser deposition, Current Applied Physics, 14 (2014)S2-S6.

30. Ao Liu, G.X. Liu, Fukai Shan* (Correspondence), H.H. Zhu, S. Xu, J.Q. Liu, B.C. Shin, W.J. Lee, Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film Transistors, Current Applied Physics, 14 (2014) S39-S43.

31. Ao Liu, Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence), J.Q. Liu, W.J. Lee, B.C. Shin, J.S. Bae, Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors, Journal of Electroceramics, 33 (2014) 31-36.

32. Q. Zhang, G.X. Liu, Fukai Shan* (Correspondence), A. Liu, W.J. Lee, B.C. Shin, Channel layer thickness dependence of In-Ti-Zn-O thin film transistors fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1514-1518.

33. G.Z. Geng, G.X. Liu, Q. Zhang, Fukai Shan* (Correspondence), W.J. Lee, B.C. Shin, C.R. Ho, Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition, Journal of the Korean Physical Society, 64 (2014) 1437-1440.

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